Govt. Exams
Entrance Exams
Miller effect causes effective input capacitance to increase by factor (1 + |Av|), reducing input impedance and bandwidth. This limits high-frequency response.
Three RC sections are used, each providing 60° phase shift. Total = 3 × 60° = 180°, which combined with 180° from inverting amp gives 360° (0°) for sustained oscillation.
Class B has maximum efficiency of π/4 ≈ 78.5%. Each transistor conducts 180° of the signal cycle, eliminating idle current waste compared to Class A.
Barkhausen criterion requires loop gain ≥ 1 (or |A×β| ≥ 1) for sustained oscillations; less than 1 causes damping, more than 1 causes amplitude growth until saturation.
Voltage follower has Zin ≈ infinity (determined by op-amp input impedance) and Zout ≈ 0, making it ideal for impedance transformation.
Voltage divider bias with low impedance provides stiff bias independent of transistor parameters, preventing thermal runaway by maintaining stable base voltage despite temperature changes.
In saturation, VCE(sat) ≈ 0.1-0.3 V for silicon BJT (not zero due to residual resistance). VBE(on) ≈ 0.7V in saturation. This is used in switching applications.
GBP = Aol × f. For 741: 1 MHz = Aol × 100 kHz, therefore Aol = 1 MHz / 100 kHz = 10 V/V. GBP is approximately constant over frequency.
Colpitts oscillator frequency f = 1/(2π√(L·Ceq)) where Ceq = (C1·C2)/(C1+C2). Voltage divider is formed by C1 and C2 for feedback.
Maximum theoretical efficiency of Class A = π/4 ≈ 78.5% when maximum swing is used, but practically 25-50% is achieved due to quiescent current and losses.