Home Subjects Electrical Engg (EEE) Power Electronics

Electrical Engg (EEE)
Power Electronics

Electrical machines, power systems, circuits

26 Q 7 Topics Take Mock Test
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Difficulty: All Easy Medium Hard 11–20 of 26
Topics in Electrical Engg (EEE)
In a controlled rectifier circuit, the commutation overlap angle (μ) depends on:
A Only the firing angle
B Source impedance and load current
C Only the load resistance
D Switching frequency
Correct Answer:  B. Source impedance and load current
EXPLANATION

Commutation overlap occurs due to finite source impedance. The overlap angle μ = sin⁻¹(ωLₛI/√2×Vline), depending on source inductance and current.

Test
A single-phase half-wave rectifier with a firing angle of 45° is connected to a 230V, 50Hz AC source. Calculate the RMS output voltage.
A 89.4 V
B 115.8 V
C 162.8 V
D 108.6 V
Correct Answer:  D. 108.6 V
EXPLANATION

For half-wave rectifier: Vrms = (Vm/2)√[(π - α + sin(2α))/(2π)] where α = 45° = π/4, Vm = 230√2 = 325.3V. Vrms ≈ 108.6V

Test
The phenomenon of 'latch-up' in power semiconductor devices occurs due to:
A Exceeding maximum drain current
B Parasitic thyristor formation (BJT-BJT interaction)
C Exceeding junction temperature
D Gate voltage exceeding maximum rating
Correct Answer:  B. Parasitic thyristor formation (BJT-BJT interaction)
EXPLANATION

Latch-up in CMOS and power devices occurs when parasitic p-n-p and n-p-n transistors form a regenerative feedback loop, causing high current and potential device destruction

Test
In a synchronous rectifier design, the gate drive signal for the MOSFET switch should be synchronized with:
A Input voltage
B Output voltage
C The body diode conduction interval
D The primary switch in the converter
Correct Answer:  D. The primary switch in the converter
EXPLANATION

Synchronous rectifier gate drive must be timed with the primary switch to replace the body diode conduction, typically during the primary switch OFF period

Test
The average output voltage of a three-phase half-wave uncontrolled rectifier is:
A 0.827 × Vm
B 0.707 × Vm
C 1.35 × Vm
D 1.65 × Vm
Correct Answer:  A. 0.827 × Vm
EXPLANATION

For a three-phase half-wave uncontrolled rectifier, Vdc = (3√3/2π) × Vm ≈ 0.827 × Vm

Test
In a forward converter, the energy stored in the magnetizing inductance during the ON time is transferred to:
A The output during ON time
B The load through the output diode during OFF time
C The input source during OFF time
D Heat dissipation
Correct Answer:  C. The input source during OFF time
EXPLANATION

In a forward converter, when the switch turns OFF, the magnetizing inductance energy is transferred back to the input source through the demagnetization winding

Test
In a synchronous buck converter, the advantages of using a low-side MOSFET instead of a diode are:
A Reduced conduction losses and improved efficiency
B Increased switching frequency capability
C Lower cost
D Both A and B
Correct Answer:  D. Both A and B
EXPLANATION

Synchronous MOSFETs have lower on-state resistance than diode forward voltage drop, reducing losses. Active switching also allows higher frequency operation with better control.

Test
Which control strategy for a DC-DC converter provides the tightest output voltage regulation under varying input voltage and load conditions?
A Open-loop voltage control
B Closed-loop feedback control with compensation
C Feed-forward control
D Proportional control only
Correct Answer:  B. Closed-loop feedback control with compensation
EXPLANATION

Closed-loop feedback control with error amplifier and compensation networks provides superior regulation by continuously adjusting duty cycle based on output voltage error.

Test
In a three-level diode-clamped inverter (Neutral Point Clamped), the advantage over two-level inverter is:
A Lower switching frequency required
B Lower dv/dt and reduced EMI
C Reduced component count
D Lower cost
Correct Answer:  B. Lower dv/dt and reduced EMI
EXPLANATION

Three-level inverter generates three voltage levels, reducing the step size and dv/dt compared to two-level inverter, thus reducing EMI and stress on motor windings.

Test
The dv/dt rating of a power semiconductor is important because it:
A Indicates the maximum switching speed
B Prevents false triggering due to capacitive coupling
C Determines the heat dissipation capability
D Affects the efficiency of the device
Correct Answer:  B. Prevents false triggering due to capacitive coupling
EXPLANATION

High dv/dt can cause displacement currents through parasitic capacitances, potentially triggering devices unintentionally. dv/dt rating specifies the maximum safe rate of voltage change.

Test
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