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Electronics (ECE)

Analog/digital electronics, communication

135 Q 4 Topics Take Mock Test
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Difficulty: All Easy Medium Hard 101–110 of 135
Topics in Electronics (ECE)
A multiplexer with 8 inputs requires how many select lines?
A 2
B 3
C 4
D 8
Correct Answer:  B. 3
EXPLANATION

For n select lines, 2^n inputs are possible. For 8 inputs: 2^n = 8, so n = 3. An 8:1 multiplexer needs 3 select lines (A, B, C).

Test
In Gray code, consecutive numbers differ by:
A One bit only
B Two bits
C Three bits
D Variable number of bits
Correct Answer:  A. One bit only
EXPLANATION

Gray code (Reflected Binary Code) is designed such that successive values differ by only one bit. This is useful in error detection and mechanical encoders.

Test
The decimal equivalent of binary number 10110.101 is:
A 22.625
B 23.625
C 24.625
D 25.625
Correct Answer:  A. 22.625
EXPLANATION

10110.101 = 1×16 + 0×8 + 1×4 + 1×2 + 0×1 + 1×0.5 + 0×0.25 + 1×0.125 = 16 + 4 + 2 + 0.5 + 0.125 = 22.625

Test
How many 2-input NAND gates are required to implement a 2-input AND gate?
A 1
B 2
C 3
D 4
Correct Answer:  B. 2
EXPLANATION

AND gate can be implemented using two NAND gates. First NAND gate as AND, second NAND gate as NOT (both inputs same) to negate the output.

Test
The output of a NAND gate is 0 when:
A At least one input is 0
B All inputs are 1
C At least one input is 1
D All inputs are 0
Correct Answer:  B. All inputs are 1
EXPLANATION

NAND gate output is 0 only when all inputs are 1. NAND is NOT of AND operation. For 2-input: output is 0 only when both inputs are 1.

Test
Which of the following is NOT a basic logic gate?
A AND gate
B OR gate
C XOR gate
D NOT gate
Correct Answer:  C. XOR gate
EXPLANATION

XOR is a derived logic gate made from combination of basic gates (AND, OR, NOT). The three basic gates are AND, OR, and NOT.

Test
In a silicon p-n junction diode at room temperature (T = 300K), the thermal voltage (VT) is approximately:
A 26 mV
B 52 mV
C 13 mV
D 39 mV
Correct Answer:  A. 26 mV
EXPLANATION

Thermal voltage VT = kT/q, where k = 1.38×10⁻²³ J/K, T = 300K, q = 1.6×10⁻¹⁹ C. VT ≈ 26 mV at room temperature, a fundamental parameter in semiconductor device physics.

Test
Which semiconductor material has the highest electron mobility among common choices?
A GaAs
B Si
C Ge
D InP
Correct Answer:  A. GaAs
EXPLANATION

GaAs has electron mobility ~8500 cm²/Vs, significantly higher than Si (~1350 cm²/Vs), enabling higher frequency operation.

Test
A power MOSFET has RDS(on) = 0.5 Ω and carries 20 A. What is the approximate conduction power loss?
A 100 W
B 200 W
C 50 W
D 400 W
Correct Answer:  B. 200 W
EXPLANATION

Pconduction = ID²·RDS(on) = (20)²×0.5 = 400×0.5 = 200 W

Test
In a p-channel MOSFET, if VGS = -8 V and VT = -2 V, what is the gate-source overdrive voltage?
A -6 V
B 6 V
C -10 V
D 10 V
Correct Answer:  A. -6 V
EXPLANATION

For p-channel: |VGS - VT| = |-8 - (-2)| = |-6| = 6 V overdrive, or algebraically VGS - VT = -8 - (-2) = -6 V

Test
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