Home Subjects Electrical Engg (EEE)

Electrical Engg (EEE)

Electrical machines, power systems, circuits

321 Q 7 Topics Take Mock Test
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Difficulty: All Easy Medium Hard 91–100 of 321
Topics in Electrical Engg (EEE)
Q.91 Medium Power Electronics
Which of the following is NOT a source of harmonic distortion in power converters?
A Non-sinusoidal switching waveforms
B Interaction with line inductance
C Increased ambient temperature
D Unequal device parameters in parallel connections
Correct Answer:  C. Increased ambient temperature
EXPLANATION

Ambient temperature affects thermal behavior but does not directly cause harmonic distortion. Harmonics arise from non-linear switching, circuit inductances, and device mismatches.

Test
Q.92 Medium Power Electronics
In a resonant DC-DC converter, what is the primary advantage over PWM converters?
A Lower cost
B Simpler control
C Reduced switching losses and EMI
D Higher output voltage
Correct Answer:  C. Reduced switching losses and EMI
EXPLANATION

Resonant converters achieve zero-voltage or zero-current switching, significantly reducing switching losses and electromagnetic interference compared to PWM converters

Test
Q.93 Medium Power Electronics
The dv/dt rating of a thyristor is critical because:
A It determines maximum switching frequency
B Exceeding it can cause unwanted turn-on due to capacitive coupling
C It affects thermal resistance
D It determines reverse recovery time
Correct Answer:  B. Exceeding it can cause unwanted turn-on due to capacitive coupling
EXPLANATION

If dv/dt exceeds the rated value, capacitive current through the junction can turn on the thyristor prematurely, causing malfunction

Test
Q.94 Medium Power Electronics
What is the typical efficiency range of modern power MOSFETs in switching applications?
A 70-80%
B 80-90%
C 90-98%
D 98-99.5%
Correct Answer:  C. 90-98%
EXPLANATION

Modern power MOSFETs in well-designed switching converters achieve efficiency in the range of 90-98%, depending on operating point and circuit design

Test
Q.95 Medium Power Electronics
The turn-off time of an IGBT at 25°C is typically in the range of:
A 100-500 ns
B 1-10 µs
C 100-500 µs
D 1-10 ms
Correct Answer:  A. 100-500 ns
EXPLANATION

Modern IGBTs have turn-off times in the range of 100-500 nanoseconds depending on the device rating and switching conditions

Test
Q.96 Medium Power Electronics
What is the conduction angle of each thyristor in a three-phase full converter operating at 60° firing angle?
A 60°
B 120°
C 180°
D 240°
Correct Answer:  B. 120°
EXPLANATION

In a three-phase full converter, each thyristor conducts for 120° (π/3 radians) regardless of the firing angle within the commutation period

Test
Q.97 Medium Power Electronics
Which modulation technique provides the best harmonic performance in high-power applications?
A Sinusoidal PWM (SPWM)
B Space Vector PWM (SVPWM)
C Hysteresis PWM
D Random PWM
Correct Answer:  B. Space Vector PWM (SVPWM)
EXPLANATION

SVPWM provides superior harmonic performance, higher DC link utilization (~15% more), and better efficiency in high-power applications compared to SPWM

Test
Q.98 Medium Power Electronics
The switching frequency of a PWM inverter is 10 kHz. What is the fundamental frequency of the output if the modulation index is 0.8?
A 8 kHz
B 10 kHz
C Depends on load impedance
D 5 kHz
Correct Answer:  D. 5 kHz
EXPLANATION

The output fundamental frequency is typically half the switching frequency in standard PWM, or determined by reference signal. With modulation, output frequency follows the reference signal, typically much lower than switching frequency.

Test
Q.99 Medium Power Electronics
In a current-source inverter (CSI), the DC link contains:
A A large capacitor for voltage stabilization
B A large inductor for current stabilization
C Both capacitor and inductor
D Neither capacitor nor inductor
Correct Answer:  B. A large inductor for current stabilization
EXPLANATION

CSI uses an inductor in the DC link to maintain a relatively constant current source, in contrast to VSI (Voltage Source Inverter) which uses a capacitor for constant voltage.

Test
Q.100 Medium Power Electronics
The thermal resistance (Rtheta-JA) of a power semiconductor determines:
A The maximum safe junction temperature
B How quickly the device can be switched
C The temperature rise of the junction for a given power dissipation
D The forward voltage drop of the device
Correct Answer:  C. The temperature rise of the junction for a given power dissipation
EXPLANATION

Thermal resistance is the temperature difference per unit power dissipation: ΔT = Rθ × P. Lower thermal resistance means better heat transfer and lower junction temperature.

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